비평형 초과운반자
Semiconductor Physics and Devices, Basic Principles, 4Ed. Donald A. Neamen
Determine the time behavior of excess carriers as a semiconductor returns to thermal equilibrium.
Consider an infinitely large, homogeneous n-type semiconductor with zero applied electric field. Assume that at time t=0, a uniform concentration of excess carriers exists in the crystal, but assume that g'=0 for t>0. If we assume that the concentration of excess carriers is much smaller than the thermal-equilibrium electron concentration, then the low injection condition applies. Calculate the excess carrier concentration as a function of time for $t\ge 0$
Consider an infinitely large, homogeneous n-type semiconductor with zero applied electric field. Assume that at time t=0, a uniform concentration of excess carriers exists in the crystal, but assume that g'=0 for t>0. If we assume that the concentration of excess carriers is much smaller than the thermal-equilibrium electron concentration, then the low injection condition applies. Calculate the excess carrier concentration as a function of time for $t\ge 0$
해설보기
$\delta p(t)=\delta p(0) e^{-t/\tau 0}$
Q
시간에 따른 초과운반자 밀도는?
A
A
시간이 흐를수록 지수함수적으로 감소
Example 6.2